Title of article :
Adsorption of Si on Ag(0 0 1) from ab initio study
Author/Authors :
He، نويسنده , , Guo-min، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2009
Pages :
9
From page :
2021
To page :
2029
Abstract :
We have systematically investigated the adsorption of Si on the Ag(0 0 1) surface employing density-functional theory. Various adsorption geometries have been considered for Si coverages up to 2.0 monolayers. Our results show that the behaviors of Si at the early stages of growth on the Ag(0 0 1) surface are governed by a competition between the Si–Si and Si–Ag interactions. From the calculated results, we presented alternative models for the observed 3 × 3 and 4 × 7 structures. Our results provide a reasonable explanation for the experimental findings in a previous work.
Keywords :
Metal–semiconductor interfaces , Density functional calculations
Journal title :
Surface Science
Serial Year :
2009
Journal title :
Surface Science
Record number :
1704654
Link To Document :
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