Title of article :
Phase coexistence between the (√3 × √3)R30° – β and (1 × 1) phases on Pb/Ge(1 1 1)
Author/Authors :
Sato، نويسنده , , Y. and Chiang، نويسنده , , S.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2009
Abstract :
We have characterized the phase transition between the (1 × 1) and (√3 × √3)R30° – β phases on Pb/Ge(1 1 1) using low energy electron microscopy (LEEM). We show that the transition is first-order and that, in the coexistence region of the two phases, the dominant mechanism for phase separation changes critically with Pb coverage, from nucleation and growth at 1.33 ML (saturation coverage of the β phase) to spontaneous domain switching due to thermal fluctuations of the local Pb density for slightly smaller coverage. As the Pb coverage decreases, the concentration of vacancies in the β phase increases, making additional possible Pb adsorption sites available. The larger resulting local density fluctuation of Pb becomes comparable to the density difference of the two phases, manifesting itself in the observed domain switching.
Keywords :
Lead , Germanium , phase transition , phase coexistence , Metal–semiconductor interfaces , Solid–liquid interfaces , LEEM
Journal title :
Surface Science
Journal title :
Surface Science