Title of article
Irreversible structural transformation of Si(1 1 4)-2 × 1 induced by subsurface carbon
Author/Authors
Duvjir، نويسنده , , Ganbat and Kim، نويسنده , , Hiding and Lee، نويسنده , , Seung Mi and Li، نويسنده , , Huiting and Dugerjav، نويسنده , , Otgonbayar and Cho، نويسنده , , Sanghee and Chiem، نويسنده , , Chu Van and Lee، نويسنده , , J.-K. and Seo، نويسنده , , Jae M. Seo، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2009
Pages
6
From page
2312
To page
2317
Abstract
Using scanning tunneling microscopy (STM), it has been found that the reconstruction of Si(1 1 4) is transformed irreversibly from a 2 × 1 structure composed of dimer (D), rebonded atom (R), and tetramer (T) rows (phase A) to a different kind of 2 × 1 structure composed of D, T, and T rows (phase B) by C incorporation. It has been confirmed by high-resolution synchrotron core-level photoemission spectroscopy (PES) that such an irreversible structural transformation is due to stable subsurface C atoms. They induce anisotropic compressive stress on the surface, which results in insertion of Si dimers to an R row to form a T row.
Keywords
Scanning tunneling microscopy , Photoelectron spectroscopy , Subsurface species , surface structure , High index single crystal surfaces , Silicon , carbon
Journal title
Surface Science
Serial Year
2009
Journal title
Surface Science
Record number
1704778
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