Author/Authors :
Duvjir، نويسنده , , Ganbat and Kim، نويسنده , , Hiding and Lee، نويسنده , , Seung Mi and Li، نويسنده , , Huiting and Dugerjav، نويسنده , , Otgonbayar and Cho، نويسنده , , Sanghee and Chiem، نويسنده , , Chu Van and Lee، نويسنده , , J.-K. and Seo، نويسنده , , Jae M. Seo، نويسنده ,
Abstract :
Using scanning tunneling microscopy (STM), it has been found that the reconstruction of Si(1 1 4) is transformed irreversibly from a 2 × 1 structure composed of dimer (D), rebonded atom (R), and tetramer (T) rows (phase A) to a different kind of 2 × 1 structure composed of D, T, and T rows (phase B) by C incorporation. It has been confirmed by high-resolution synchrotron core-level photoemission spectroscopy (PES) that such an irreversible structural transformation is due to stable subsurface C atoms. They induce anisotropic compressive stress on the surface, which results in insertion of Si dimers to an R row to form a T row.
Keywords :
Scanning tunneling microscopy , Photoelectron spectroscopy , Subsurface species , surface structure , High index single crystal surfaces , Silicon , carbon
