Author/Authors :
Salomon، نويسنده , , E. and Angot، نويسنده , , T. and Thomas، نويسنده , , C. and Layet، نويسنده , , J.-M. and Palmgren، نويسنده , , P. and Nlebedim، نويسنده , , C.I. and Gِthelid، نويسنده , , M.، نويسنده ,
Abstract :
Scanning Tunnelling Microscopy, High Resolution Electron Energy Loss Spectroscopy and High Resolution X-Ray Photoelectron Spectroscopy have been used to study the adsorption of atomic hydrogen onto Si nanowires grown on Ag(1 1 0). We demonstrate that the hydrogen strongly interacts with the Si nanowires modifying their structural and electronic properties. Hydrogen atoms etch the Si nanowires and eventually lead to their complete removal from the Ag(1 1 0) surface.
Keywords :
Silicon nanowires , Scanning tunnelling microscopy , Atomic hydrogen , X-ray photoelectron spectroscopy , Electron Energy Loss Spectroscopy
