Author/Authors :
Ulfat، نويسنده , , I. and Adell، نويسنده , , J. and Sadowski، نويسنده , , J. and Ilver، نويسنده , , L. and Kanski، نويسنده , , J.، نويسنده ,
Abstract :
The surface of a Ga0.95Mn0.05As layer subjected to low temperature annealing under As capping has been studied by core level photoemission with focus on As3d spectrum. By detailed comparison with the surface of pure GaAs subjected to the same surface treatment, the As spectral component of the reacted surface layer has been identified. The relative intensity of this component is consistent with the notion of an MnAs monolayer terminating the annealed (GaMn)As surface.
Keywords :
Core level photoemission , As3d spectrum , (GaMn)As , Post-growth annealing
