Title of article
Surface electronic structure of InSb(001)-c(8 × 2)
Author/Authors
Walczak، نويسنده , , L. and Goryl، نويسنده , , G. and Valbuena، نويسنده , , M.A. and Vobornik، نويسنده , , I. and Tejeda، نويسنده , , A. and Taleb-Ibrahimi، نويسنده , , A. and Kolodziej، نويسنده , , J.J. and Segovia، نويسنده , , P. and Michel، نويسنده , , E.G.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2013
Pages
9
From page
22
To page
30
Abstract
We report an angle-resolved photoemission study of the surface electronic structure of the indium-rich InSb(001)-c(8 × 2) surface, combined with scanning tunneling microscopy and spectroscopy. The reconstructed surface is found to be semiconducting and exhibits no band bending at room temperature. We identify several different surface states, analyze their properties and determine the atomic origin of the most prominent surface state band observed close to the valence band maximum. The electronic band structure is found to exhibit a temperature induced shift, which is quantitatively explained from the change of the chemical potential with temperature, combined with the formation of a surface photovoltage at low temperature.
Keywords
Surface states , Electronic structure , III–V semiconductors
Journal title
Surface Science
Serial Year
2013
Journal title
Surface Science
Record number
1705483
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