Author/Authors :
Yang، نويسنده , , Seolun and Park، نويسنده , , H.-K. and Kim، نويسنده , , J.-S. and Phark، نويسنده , , S.-H. and Chang، نويسنده , , Young Jun and Noh، نويسنده , , T.W. and Hwang، نويسنده , , H.-N. and Hwang، نويسنده , , C.-C. and Kim، نويسنده , , H.-D.، نويسنده ,
Abstract :
As the film becomes atomically thin, the on-site Coulomb interaction energy between two 3p holes of the NiO films on Ag(001) U (Ni 3p) significantly decreases as revealed by both X-ray photoelectron and Auger electron spectroscopies. The reduction of U (Ni 3p) for the ultrathin films is well accounted for by varied image potentials and polarization energies in the films from their bulk values. The present results confirm a previous model predicting the reduction of charge fluctuation energies in ultrathin oxide films on highly polarizable substrates due to the extra-atomic relaxations.
Keywords :
Ultrathin NiO film , Coulomb correlation energy , AG , Image charge potential , Polarization energy , Charge transfer energy
