Author/Authors :
Matetskiy، نويسنده , , A.V. and Bondarenko، نويسنده , , L.V. and Gruznev، نويسنده , , D.V. and Zotov، نويسنده , , A.V. and Saranin، نويسنده , , A.A. and Chou، نويسنده , , J.P. and Hsing، نويسنده , , C.R. and Wei، نويسنده , , C.M. and Wang، نويسنده , , Y.L.، نويسنده ,
Abstract :
In-accumulated Si(111)√3 × √3-Au surface represents a highly-ordered homogeneous Au/Si(111) reconstruction with a two-dimensional gas of In adatoms on it. Regularities of C60 migration on this surface have been elucidated through analysis of C60 island density as a function of growth temperature and deposition rate in the framework of the rate equation theory and simulation of C60 migration using density-functional-theory calculations. The critical cluster size has been found to be i = 1 for the whole temperature range studied, from 110 to 240 K, while activation energy for C60 diffusion varies from (99 ± 18) meV at 110 ÷ 140 K to (370 ± 24) meV at 160 ÷ 240 K. This finding has been accounted to the peculiarity of C60 migration in a labyrinth built of In adatoms on the Si(111)√3 × √3-Au surface, namely, at low temperatures C60 migration is confined within the labyrinth channels, while at high temperatures C60 molecules possess enough thermal energy to surmount the labyrinth walls.
Keywords :
surface diffusion , Atom–solid interactions , Scanning tunneling microscopy , Fullerene , Silicon , first-principle calculations
