Title of article :
Al-induced faceting of Si(113)
Author/Authors :
Klein، نويسنده , , Claudius and Heidmann، نويسنده , , Inga and Nabbefeld، نويسنده , , Tobias and Speckmann، نويسنده , , Moritz and Schmidt، نويسنده , , Thomas and Meyer zu Heringdorf، نويسنده , , Frank-J. and Falta، نويسنده , , Jens and Horn-von Hoegen، نويسنده , , Michael، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2013
Pages :
6
From page :
109
To page :
114
Abstract :
Adsorption of Al on a Si(113) substrate at elevated temperatures causes a faceting transition of the initially flat surface. The (113) surface decomposes into a quasi-periodic sequence of Al terminated (115)- and (112)-facets. The resulting surface morphology is characterized in-situ by reciprocal space maps obtained with in-situ spot profile analyzing low-energy electron diffraction and ex-situ atomic force microscopy. The periodicity length of the faceted surface increases with adsorption temperature from 7 nm at 650 °C to 80 nm at 800 °C. The stability of the Al terminated Si(112) surface is the driving force for the faceting transition.
Keywords :
Aluminium , SPA-LEED , Facet , epitaxy , Nanowire , Silicon
Journal title :
Surface Science
Serial Year :
2013
Journal title :
Surface Science
Record number :
1706182
Link To Document :
بازگشت