Title of article :
Observation of the adsorption and desorption kinetics of weakly bound CO on Si(001)-c(4 × 2) by means of scanning tunneling microscopy
Author/Authors :
Momose، نويسنده , , T. and Ohno، نويسنده , , S. and Kitajima، نويسنده , , T. Uchikoshi T. S. Suzuki Y. Sakka، نويسنده , , T. and Tanaka، نويسنده , , M.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2014
Abstract :
The weak adsorption state of CO molecules on a Si(001)-c(4 × 2) surface at the temperature of 75 K has been investigated by means of scanning tunneling microscopy (STM). Lateral expansion of CO-adsorbed islands and preferential formation of a weakly adsorbed state near the CO adsorbed islands were directly observed with STM at low CO exposure. We found that the weakly adsorbed CO is desorbed from the surface when CO exposure is stopped. At high CO exposure, we observed multilayered CO islands, which disappeared after cessation of CO exposure.
Keywords :
CO molecule , Scanning tunneling microscopy , Reaction kinetics , Si surface
Journal title :
Surface Science
Journal title :
Surface Science
