Title of article :
InP-based photonic circuits: Comparison of monolithic integration techniques
Author/Authors :
van der Tol، نويسنده , , J.J.G.M. and Oei، نويسنده , , Y.S. and Khalique، نويسنده , , U. and Nِtzel، نويسنده , , R. and Smit، نويسنده , , M.K.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Abstract :
A review is given of techniques to integrate passive and active, optical and optoelectronic, functions within one photonic circuit. Different platforms have been developed to realize these circuits in a planar geometry on an indium phosphide substrate. The physical background of these techniques will be described and an evaluation will be given regarding their strong and weak points. An in-depth treatment will be given of two of the integration techniques, which have not yet been thoroughly described in literature: a polarization-based integration scheme (POLIS) and an active–passive regrowth technique. Finally, an outlook on the future of the different photonic integration techniques is presented.
Keywords :
Active-passive integration , epitaxy , monolithic integration , Indium phosphide , Photonic circuits , Integration technology
Journal title :
Progress in Quantum Electronics
Journal title :
Progress in Quantum Electronics