Preparation of LiMn2O4 thin films by a sol–gel method

LiMn2O4 thin films were prepared by a sol–gel method using spin-coating and annealing processes. Anhydrous Mn(CH3COCHCOCH3)3 (manganese acetylacetonate) and LiCH3COCHCO–CH3 (lithium acetylacetonate) were chosen as source materials. The film electrochemical properties depended on the drying temperature even when subjected to the same annealing conditions. The discharge capacity of annealed film increased as the drying temperature was increased. However, the rate of capacity fading during cycling increased as the drying temperature was increased.