Author/Authors :
Higuchi، نويسنده , , T and Tsukamoto، نويسنده , , T and Sata، نويسنده , , N and Ishigame، نويسنده , , M and Kobayashi، نويسنده , , K and Yamaguchi، نويسنده , , S and Ishiwata، نويسنده , , Y and Yokoya، نويسنده , , T and Fujisawa، نويسنده , , M and Shin، نويسنده , , S، نويسنده ,
Abstract :
The hole-state and defect structure of proton conductor SrTi1−xScxO3 have been studied by high-resolution X-ray absorption spectroscopy. The proton-induced level is observed in proton-doped SrTi1−xScxO3. The energy separation between the top of the valence band and the bottom of the acceptor or proton level is considered to be the activation energy determined by electronic or proton conductivity.
Keywords :
XAS , Proton level , Acceptor level , SrTiO3 , Hole-state , Protonic conductor
