Title of article
Preparation of AlN polycrystalline plate from aluminum plate
Author/Authors
Ito، نويسنده , , Shigeru and Fujii، نويسنده , , Takashi and Ishikawa، نويسنده , , Kenichiro، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
5
From page
129
To page
133
Abstract
AlN was produced by nitriding electrolytically etched aluminum plate. It was found that the plate shape did not change. (100) Oriented aluminum plate (18×50×0.1 mm in size, 99.99% in purity) was suitable for the conservation of plate shape. Electrolytic etching and preheating at 600°C in N2 flow are essential for the complete nitriding. Although nitriding temperature (1100–1400°C) was much higher than the melting point of aluminum, the plate was completely nitrided without the destruction of shape. The surface film of aluminum oxide, which was formed by a trace amount of oxygen in N2 gas, conserved the plate shape during nitriding. The relative density of product was increased to 91% by sintering at 1800°C for 2 h.
Keywords
Aluminum plate , AIN , Nitriding
Journal title
Solid State Ionics
Serial Year
2001
Journal title
Solid State Ionics
Record number
1708322
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