Title of article :
Preparation of AlN polycrystalline plate from aluminum plate
Author/Authors :
Ito، نويسنده , , Shigeru and Fujii، نويسنده , , Takashi and Ishikawa، نويسنده , , Kenichiro، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Abstract :
AlN was produced by nitriding electrolytically etched aluminum plate. It was found that the plate shape did not change. (100) Oriented aluminum plate (18×50×0.1 mm in size, 99.99% in purity) was suitable for the conservation of plate shape. Electrolytic etching and preheating at 600°C in N2 flow are essential for the complete nitriding. Although nitriding temperature (1100–1400°C) was much higher than the melting point of aluminum, the plate was completely nitrided without the destruction of shape. The surface film of aluminum oxide, which was formed by a trace amount of oxygen in N2 gas, conserved the plate shape during nitriding. The relative density of product was increased to 91% by sintering at 1800°C for 2 h.
Keywords :
Aluminum plate , AIN , Nitriding
Journal title :
Solid State Ionics
Journal title :
Solid State Ionics