• Title of article

    Preparation of AlN polycrystalline plate from aluminum plate

  • Author/Authors

    Ito، نويسنده , , Shigeru and Fujii، نويسنده , , Takashi and Ishikawa، نويسنده , , Kenichiro، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2001
  • Pages
    5
  • From page
    129
  • To page
    133
  • Abstract
    AlN was produced by nitriding electrolytically etched aluminum plate. It was found that the plate shape did not change. (100) Oriented aluminum plate (18×50×0.1 mm in size, 99.99% in purity) was suitable for the conservation of plate shape. Electrolytic etching and preheating at 600°C in N2 flow are essential for the complete nitriding. Although nitriding temperature (1100–1400°C) was much higher than the melting point of aluminum, the plate was completely nitrided without the destruction of shape. The surface film of aluminum oxide, which was formed by a trace amount of oxygen in N2 gas, conserved the plate shape during nitriding. The relative density of product was increased to 91% by sintering at 1800°C for 2 h.
  • Keywords
    Aluminum plate , AIN , Nitriding
  • Journal title
    Solid State Ionics
  • Serial Year
    2001
  • Journal title
    Solid State Ionics
  • Record number

    1708322