• Title of article

    Atomistic calculation of association energy in doped ceria

  • Author/Authors

    Wei، نويسنده , , Xi and Pan، نويسنده , , Wei and Cheng، نويسنده , , Laifei and Li، نويسنده , , Bin، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2009
  • Pages
    5
  • From page
    13
  • To page
    17
  • Abstract
    Atomistic simulation based on energy minimization techniques was carried out to study the association energies of more than 300 defect structures of ceria doped with Lu2O3, Yb2O3, Er2O3, Y2O3, Gd2O3, Eu2O3, Sm2O3, Nd2O3 and La2O3. The calculation ensemble includes all the possible defect structures in 6.25 mol% doped ceria. It is revealed that a clear preference for vacancy–dopant association occurs energetically for small dopant cations and vacancy–Ce4+ association for large dopant cations, with the crossover at Gd3+. The defect structures with the maximum association effect for different trivalent cations were determined. For Gd3+ doped ceria which presents the lowest association effect in the trivalent doped ceria, the association energies of four different defect structures are extremely close, which agrees well with a recent EXAFS investigation, that is, Gd3+ is distributed randomly in the ceria lattice. This work provides insight for the understanding of ionic conductivity in doped ceria.
  • Keywords
    Doped CeO2 , atomistic simulation , Association energy , Defect associate , ionic conductivity
  • Journal title
    Solid State Ionics
  • Serial Year
    2009
  • Journal title
    Solid State Ionics
  • Record number

    1709704