High efficiency deep blue phosphorescent organic light-emitting diodes using a tetraphenylsilane based phosphine oxide host material

High efficiency deep blue phosphorescent organic light-emitting diodes (PHOLEDs) were fabricated using a tetraphenylsilane based phosphine oxide derivative, bis(4-(diphenylphosphoryl)phenyl)diphenylsilane (BDDS), as the electron transport type host material. The BDDS was effective as the host material for deep blue PHOLED and a mixed host of the BDDS with hole transport type host material further improved the quantum efficiency of deep blue PHOLEDs. A maximum quantum efficiency of 18.1% and a quantum efficiency of 12.2% at 1000 cd/m2 with a color coordinate of (0.137, 0.191) were achieved.