• Title of article

    Intrinsic polyatomic defects in Sc2(WO4)3

  • Author/Authors

    Zhou، نويسنده , , Yongkai and Rao، نويسنده , , R. Prasada and Adams، نويسنده , , Stefan، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2011
  • Pages
    4
  • From page
    34
  • To page
    37
  • Abstract
    The intrinsic formation of polyatomic defects in Sc2(WO4)3-type structures is studied by Mott Littleton calculations and Molecular Dynamics simulations. Defects involving the WO42− tetrahedron are found to be energetically favorable when compared to isolated W and O defects. WO42− Frenkel and (2Sc3+, 3WO42−) Schottky defects exhibit formation energies of 1.23 eV and 1.97 eV, respectively and therefore may occur as intrinsic defects in Sc2(WO4)3 at elevated temperatures. WO42− vacancy and interstitial migration processes have been simulated by classical Molecular Dynamics simulations. The interstitial defect exhibits a nearly 10 times higher mobility (with a migration energy of 0.68 eV), than the vacancy mechanism (with a slightly higher migration energy of 0.74 eV) and thus should dominate the overall ionic conduction. Still both models reproduce the experimental activation energy (0.67 eV) nearly within experimental uncertainty.
  • Keywords
    Ion conducting solids , Scandium tungstate , Polyatomic defect , Tungstate migration , computer simulations , lattice dynamics
  • Journal title
    Solid State Ionics
  • Serial Year
    2011
  • Journal title
    Solid State Ionics
  • Record number

    1710411