Title of article :
Accommodation of excess oxygen in fluorite dioxides
Author/Authors :
Middleburgh، نويسنده , , S.C. and Lumpkin، نويسنده , , G.R. and Grimes، نويسنده , , R.W.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2013
Pages :
4
From page :
119
To page :
122
Abstract :
Accommodation of excess oxygen in CeO2, ThO2 and UO2 has been investigated using ab-initio modelling. Calculations indicate that hyperstoichiometry is preferentially accommodated by the formation of peroxide species in CeO2 and ThO2 but not in UO2, where oxygen interstitial defects are dominant. Migration of the excess oxygen defects was also studied; the peroxide ion in CeO2 and ThO2 is transported via a different mechanism, due to the formation of peroxide molecules, to the oxygen interstitial in UO2. Frenkel pair defects were investigated to understand if the interstitial component could assume a peroxide like configuration in the vicinity of the vacancy. While it was already expected that this would not be the case for UO2 since peroxide was not stable, it was also not found to be the case for CeO2 and ThO2 with the peroxide disassociating into a lattice species and a separate interstitial ion.
Keywords :
Defect migration , Modelling , Peroxide , Radiation damage , Fluorite oxides
Journal title :
Solid State Ionics
Serial Year :
2013
Journal title :
Solid State Ionics
Record number :
1712571
Link To Document :
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