Title of article :
Simulation of flourine migration in NiF2
Author/Authors :
Atkinson، نويسنده , , K.J.W. and Grimes، نويسنده , , Robin W. and Owens، نويسنده , , Scott L، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2002
Pages :
6
From page :
443
To page :
448
Abstract :
The point defect and transport properties of nickel fluoride have been predicted using atomistic simulation. Results suggest that the dominant intrinsic defect reaction is anion Frenkel, however, formation energies are sufficiently high to suggest that intrinsic defect concentrations are low. Migration activation energies are consistent with flourine, as the most highly mobile species, being transported in the ab plane via the formation of a split interstitial configuration. Transport of both flourine and nickel will be considerably anisotropic.
Keywords :
Flourine migration , Point defect , Transport property
Journal title :
Solid State Ionics
Serial Year :
2002
Journal title :
Solid State Ionics
Record number :
1714567
Link To Document :
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