Title of article :
Direct fabrication of oxide films by a microwave–hydrothermal method at low temperature
Author/Authors :
Lee، نويسنده , , Jin-Ho and Kumagai، نويسنده , , Naoki and Watanabe، نويسنده , , Tomoaki and Yoshimura، نويسنده , , Masahiro، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2002
Pages :
5
From page :
41
To page :
45
Abstract :
A new fabrication technique of oxide film (BaTiO3 film) has been investigated by the microwave–hydrothermal (M-H) method. The BaTiO3 films were directly fabricated on Ti substrates at low temperature (100 °C) and short holding time (below 1 h). The obtained phases were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD patterns showed that a single phase of BaTiO3 film was formed on Ti plate. The formation process of BaTiO3 film was explained based on the photographs of SEM.
Keywords :
Oxide film , BaTiO3 , Microwave–hydrothermal
Journal title :
Solid State Ionics
Serial Year :
2002
Journal title :
Solid State Ionics
Record number :
1714587
Link To Document :
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