Title of article :
Single crystal growth and oxide ion conductivity of apatite-type rare-earth silicates
Author/Authors :
Higuchi، نويسنده , , M. and Masubuchi، نويسنده , , Y. and Nakayama، نويسنده , , S. and Kikkawa، نويسنده , , S. and Kodaira، نويسنده , , K.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2004
Abstract :
Rare-earth silicate with an apatite structure is a new type of oxide ion conductor, the electrical conductivity of which is higher at relatively low temperatures than that of stabilized zirconia. Single crystals are indispensable in order to reveal the intrinsic bulk properties such as anisotropy of electrical conductivity. This paper reviews our recent research work on single crystals growth by the floating zone method and electrical properties of this material, including reinvestigation of phase relations in Nd2O3–SiO2 system and structure refinement using neutron diffraction. A possible mechanism for the oxide ion conduction is proposed based on the existence of cation vacancies.
Keywords :
oxide ion conductivity , Floating zone method , Rare-earth Silicate , structure refinement , Cation vacancy
Journal title :
Solid State Ionics
Journal title :
Solid State Ionics