Synthesis and characterization of norbornene-based polymers with 7,7-dimethyloxepan-2-one acid labile groups for chemically amplified photoresists

The present paper describes a novel class of norbornene-based copolymers containing 7,7-dimethyloxepan-2-one acid labile groups. Poly(3-(bicyclo[2.2.1]hept-5-en-2-ylhydroxymethyl)-7,7-dimethyloxepan-2-one-co-5-((2-decahydronaphthyl)oxycarbonyl)-norbornene-co-5-norbornene-2-carboxylic acid-co-maleic anhydride) was synthesized and evaluated as a potential chemically amplified resist for ArF lithography. The 7,7-dimethyloxepan-2-one group of the matrix polymer was readily cleaved and the carboxylic acid functionality was formed by acid-catalyzed ring-opening reaction in the exposed region after post-exposure bake. The resist patterns of 0.12 μm feature size were obtained at a dose of 10 mJ cm−2 with a conventional developer, 2.38 wt% tetramethylammonium hydroxide aqueous solution, using an ArF excimer laser stepper.