Title of article
High temperature electrical conductivity of epitaxial Gd-doped CeO2 thin films
Author/Authors
Chen، نويسنده , , L. and Chen، نويسنده , , C.L. and Huang، نويسنده , , D.X. and Lin، نويسنده , , Y. and Chen، نويسنده , , X. and Jacobson، نويسنده , , A.J.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
4
From page
103
To page
106
Abstract
Single-crystalline epitaxial Gd-doped CeO2 (GCO, Gd0.2Ce0.8O1.9) thin films were grown on (001) NdGaO3 (NGO) and LaAlO3 (LAO) substrates through pulsed-laser deposition. The electrical conductivity was investigated by AC impedance spectroscopy. The temperature dependence of the electrical conductivity gives an activation energy of 0.74 eV for GCO/NGO and a conductivity which is very close to that of the bulk polycrystalline material. For GCO films deposited on LAO, the conductivity of the substrate makes a significant contribution to the total measured conductivity.
Keywords
Epitaxial thin films , Impedance spectroscopy , Gadolinia-doped ceria , electrical conductivity
Journal title
Solid State Ionics
Serial Year
2004
Journal title
Solid State Ionics
Record number
1717000
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