Title of article
Surface potential changes of semiconducting oxides monitored by high-pressure photoelectron spectroscopy: Importance of electron concentration at the surface
Author/Authors
B. and Gassenbauer، نويسنده , , Y. and Schafranek، نويسنده , , R. and Klein، نويسنده , , A. and Zafeiratos، نويسنده , , S. and Hنvecker، نويسنده , , M. and Knop-Gericke، نويسنده , , A. and Schlِgl، نويسنده , , R.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2006
Pages
5
From page
3123
To page
3127
Abstract
The Fermi level position at surfaces of tin-doped indium oxide (ITO) thin films has been recorded during oxygen exposure using high-pressure photoelectron spectroscopy at the BESSY storage ring. The rate of Fermi level shifts varies considerably depending on the surface electron concentration, which is determined by the Fermi level position with respect to the energy of surface states.
Keywords
indium tin oxide , Fermi level , High pressure XPS , Surface states
Journal title
Solid State Ionics
Serial Year
2006
Journal title
Solid State Ionics
Record number
1719647
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