Author/Authors :
Zhang، نويسنده , , Haipeng and Gao، نويسنده , , Mingyu and Xu، نويسنده , , Liyan and Lin، نويسنده , , Mi and Niu، نويسنده , , Xiaoyan and Lv، نويسنده , , Weifeng، نويسنده ,
Abstract :
In this paper a united Gauss–Pearson-IV (UGP) distribution model is presented by definition of a weight factor Rg, which represents the percent rate between the number of channeling ions and the number of all ions implanted for the first time based on determination of some basic relation ships and correction of some basic conclusions of Pearson-IV distribution model. The UGP models fit the experimental results of high energies B ions implantation into crystal Si with and without oxide mask and low energy BF2 implantation into crystal and amorphous Si very well.
Keywords :
Silicon , UGP model , Channeling effect , Random scattering effect , Ion implantation
