Author/Authors :
Kim، نويسنده , , Jin-Baek and Ko، نويسنده , , Jong-Sung and Choi، نويسنده , , Jae-Hak and Jang، نويسنده , , Ji Hyun and Oh، نويسنده , , Taehwan and Kim، نويسنده , , Hyunwoo and Lee، نويسنده , , Bumwook Roh، نويسنده ,
Abstract :
Poly[(methacrylic acid tert-butyl cholate ester)-co-(γ-butyrolactone-2-yl methacrylate)] was synthesized and evaluated as a new 193-nm chemically amplified photoresist. This polymer showed good thermal stability up to 240 °C and had a good transmittance at 193 nm. This material showed good resistance to CF4-reactive ion etching. The resist patterns of 0.15 μm feature size were obtained at a dose of 11 mJ cm−2 using an argon fluoride excimer laser stepper.
