• Title of article

    Materials with tunable low-k dielectric constant derived from functionalized octahedral silsesquioxanes and spherosilicates

  • Author/Authors

    Eckstorff، نويسنده , , Felix and Zhu، نويسنده , , Yongzhong and Maurer، نويسنده , , Robert and Müller، نويسنده , , Thomas E. and Scholz، نويسنده , , Sabine and Lercher، نويسنده , , Johannes A.، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2011
  • Pages
    7
  • From page
    2492
  • To page
    2498
  • Abstract
    Linked octahedral silsesquioxanes and spherosilicates offer a unique approach to tailor materials with low dielectric constants. The key lies in the design of the linking structures, which is determined by the nature of the hydrolyzable alkoxysilyl groups in the monomer. Thus, the molecular structure of the monomers influences structural, dielectric, and mechanical properties of the spin-coated polymer films via the number of alkoxysilyl groups introduced. Dielectric constants and hardness can be tuned in the range k = 2.4–3.0 and 0.20–0.85 GPa, respectively. With the use of a porogen, a dielectric constant as low as 1.9 is achieved.
  • Keywords
    Polyhedral Oligomeric Silsesquioxanes (POSS) , Low-k dielectric constant , Hardness
  • Journal title
    Polymer
  • Serial Year
    2011
  • Journal title
    Polymer
  • Record number

    1737486