Title of article :
Properties of the resonant tunneling diode in external magnetic field with inclusion of the Rashba effect
Author/Authors :
S. Niketic، نويسنده , , Nemanja and Milanovi?، نويسنده , , Vitomir and Radovanovi?، نويسنده , , Jelena، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2014
Pages :
6
From page :
52
To page :
57
Abstract :
Influence of the Rashba effect on electronic properties of resonant tunneling diode in an external magnetic field is analyzed in this paper. Wave functions and energies, as well as expressions for currents densities, are determined for electrons of both spins. Appearances of many modes due to the external magnetic field induce irregularities in the current–voltage characteristics, which are observable in case when the thermal energy is lower than, or comparable to, the energy difference of two consecutive Landau levels. Current density through the heterostructure is investigated with emphasis on the degree of spin polarization; further, spin transfer is shown to depend on the direction of external magnetic field.
Keywords :
A. Resonant tunneling diode , D. Perpendicular magnetic field , D. Rashba effect , D. Transmission
Journal title :
Solid State Communications
Serial Year :
2014
Journal title :
Solid State Communications
Record number :
1751668
Link To Document :
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