Effect of praseodymium on the electrical resistance of YВа2Сu3О7−δ single crystals

The electrical resistivity in the ab-plane of the Y1−yPryВа2Сu3О7−δ single crystals with high degree of perfection in the interval of Тc – 300 K was investigated. The increasing of praseodymium content leads to the reduction of the critical temperature (Tc) from 92 to 30 K. The experimental results can be approximated by the expression, taking into account the scattering of electrons by phonons, defects, the fluctuation conductivity in the 3D Aslamazov–Larkin model, as well as the transition to a “semiconductor” type behavior of the resistivity at the high praseodymium concentrations. The concentration dependences of all fitting parameters indicate a structural transition in the region 0.35≤у≤0.43. In particular, the Debye temperature changes in this range from 350 to 550 K, and the transverse coherence length passes through a maximum ξС(0)≈5 Å. The concentration dependence of the critical temperature testifies the d-pairing of the BCS model.