• Title of article

    High-TC ferromagnetism in multilayer Zn/ZnO films induced by native defects

  • Author/Authors

    Zhang، نويسنده , , Xiao and Sun، نويسنده , , Huijie and Zhang، نويسنده , , Xinghua and Zhang، نويسنده , , Wei and Xu، نويسنده , , Xuewen and Meng، نويسنده , , Fanbin and Tang، نويسنده , , C.C.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2014
  • Pages
    4
  • From page
    16
  • To page
    19
  • Abstract
    We synthesized dual-layer and hex-layer Zn/ZnO films by magnetron sputtering and ferromagnetism is found in both of them. In the dual-layer Zn/ZnO film, the saturated magnetization significantly decreases with increasing temperature and the ferromagnetic behavior disappears at 600 °C accompanying with apparent shrinkage of c-axial lattice parameter. In contrast, the ferromagnetic behavior in hex-layer Zn/ZnO film is still remarkable at 600 °C and the change of c-axial lattice parameter with temperature is not obvious. These results indicate that Zn interstitial defect as well as the heterostructure of Zn/ZnO dominates the evolution of ferromagnetism.
  • Keywords
    C. Multilayer , D. Room temperature ferromagnetism , A. Diluted magnetic semiconductor , B. Magnetron sputtering
  • Journal title
    Solid State Communications
  • Serial Year
    2014
  • Journal title
    Solid State Communications
  • Record number

    1751891