Title of article :
Resonant Raman scattering in MoS2—From bulk to monolayer
Author/Authors :
Go?asa، نويسنده , , K. and Grzeszczyk، نويسنده , , M. and Bo?ek، نويسنده , , R. and Leszczy?ski، نويسنده , , P. and Wysmo?ek، نويسنده , , A. and Potemski، نويسنده , , M. and Babi?ski، نويسنده , , A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2014
Pages :
4
From page :
53
To page :
56
Abstract :
Resonant Raman scattering in molybdenum disulfide (MoS2) is studied as a function of the structure thickness. Optical emission from bulk, three-, two-, and one- monolayer MoS2 is studied both at room and at liquid helium temperature. The quenching of peaks due to second-order processes was observed and attributed to the effect of the substrate on the lattice dynamics in MoS2. The experimental results are discussed within the frames of the recently proposed model of electron–phonon coupling involving transverse acoustic phonons from the vicinity of the high-symmetry M point of the MoS2 Brillouin zone.
Keywords :
A. Semiconductors , D. Raman scattering
Journal title :
Solid State Communications
Serial Year :
2014
Journal title :
Solid State Communications
Record number :
1751918
Link To Document :
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