Title of article :
Kondo physics with single electron transistors
Author/Authors :
Kastner، نويسنده , , M.A. and Goldhaber-Gordon، نويسنده , , D.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
8
From page :
245
To page :
252
Abstract :
The coupling between the confined droplet of electrons and the leads in a single electron transistor (SET) has made it possible to explore Kondo physics in ways that were never before possible. In particular, whereas the energy of the localized spin is fixed for the traditional Kondo system, a magnetic impurity in a metal, it can be varied in an SET, allowing detailed comparisons with the theory for the equilibrium Kondo problem. Furthermore, one can apply a finite bias voltage between the leads revealing non-equilibrium Kondo effects as well.
Keywords :
A. Nanostructures , D. Electron transport , D. Kondo effects
Journal title :
Solid State Communications
Serial Year :
2001
Journal title :
Solid State Communications
Record number :
1761491
Link To Document :
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