Title of article
Spin-dependent phenomena in ferromagnetic/nonmagnetic III–V heterostructures
Author/Authors
Ohno، نويسنده , , Hideo and Matsukura، نويسنده , , Fumihiro and Ohno، نويسنده , , Yuzo، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
9
From page
281
To page
289
Abstract
III–V ferromagnetic semiconductors allow epitaxial integration of ferromagnetism with nonmagnetic semiconductor heterostructures and offer opportunities to explore properties that combine conventional semiconductor physics with magnetic cooperative phenomena. Here, we review spin-dependent phenomena observed in III–V-based ferromagnetic semiconductor heterostructures, which include spin-dependent scattering, tunnel magnetoresistance, resonant tunneling with ferromagnetic emitter, spin injection, and electric field control of ferromagnetism.
Keywords
D. Electronic transport , A. Heterojunctions , D. Tunneling , D. Galvanomagnetic effects
Journal title
Solid State Communications
Serial Year
2001
Journal title
Solid State Communications
Record number
1761500
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