Spin polarized tunneling through diluted magnetic semiconductor barriers

Spin polarized transport in diluted magnetic semiconductor heterostructures is investigated theoretically. A giant change of the current for parallel and antiparallel magnetization is found in the low injection energy region. The dependence of the polarization on the thickness of the diluted magnetic semiconductor layer and on the magnetic field exhibits oscillating behavior when the thickness of the diluted magnetic semiconductor and/or the magnetic field are varied.