Title of article
Nonlinear absorption in semiconductor quantum dots
Author/Authors
Sen، نويسنده , , Pratima and Andrews، نويسنده , , J.Thomas، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
195
To page
200
Abstract
The density matrix approach has been employed to understand the mechanism of nonlinear absorption / gain in a single semiconductor quantum dot as well as in an inhomogeneous distribution of quantum dots. The analytical results show an enhancement of excitonic gain in the presence of biexcitons. The same has been confirmed by the numerical analysis carried out for a realistic system of semiconductor quantum dots of CdS embedded in a glass matrix. The numerical study exhibits a red shift of maximum gain at large distribution widths.
Keywords
A. Semiconductors , D. Electron-electron interactions , E. Nonlinear optics , B. Nanostructures
Journal title
Solid State Communications
Serial Year
2001
Journal title
Solid State Communications
Record number
1761650
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