Title of article :
Accelerated dynamics simulations of interstitial-cluster growth
Author/Authors :
Birner، نويسنده , , Stefan and Kim، نويسنده , , Jeongnim and Richie، نويسنده , , David A. and Wilkins، نويسنده , , John W. and Voter، نويسنده , , Arthur F. and Lenosky، نويسنده , , Thomas، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
4
From page :
279
To page :
282
Abstract :
We apply parallel replica dynamics to simulate the growth of silicon interstitial clusters. Existing interstitial clusters are efficient traps for mobile interstitial and di-interstitial defects. For clusters involving more than four interstitials, many metastable structures are achieved by local bonding rearrangements. The shape of interstitial nuclei critically determines the final interstitial clusters. Once an elongated cluster is formed, additional captured interstitials diffuse in the chain direction and eventually settle at the chain ends, resulting in further elongation.
Keywords :
A. Semiconductors , D. Phase transitions , D. Recombination and trapping
Journal title :
Solid State Communications
Serial Year :
2001
Journal title :
Solid State Communications
Record number :
1761712
Link To Document :
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