Can the effective pinning potential of MgB2 behave logarithmically in the high temperature range?

The pinning potential barrier Uo(T,H) is the main parameter describing the flux pinning of MgB2. Comparing the experimental results published recently by Thompson et al. and Bygoslavsky et al., one can prove theoretically that in the high temperature range, Uo(T,H) is of logarithmic form similar to that suggested for high Tc superconductors by Zeldov et al.. Meanwhile, the major pinning centers of MgB2 employ the planar pinning mechanism. Furthermore, it is found that Uo(T,H) depends on the temperature linearly and also on the magnetic field with the form H−1∼−2 at high temperature range.