Title of article
Impurity-related emission in the photoluminescence from p-type modulation doped Al1−xGaxAs/GaAs heterostructures
Author/Authors
Bryja، نويسنده , , L and Kubisa، نويسنده , , M and Ryczko، نويسنده , , K and Misiewicz، نويسنده , , J and Larionov، نويسنده , , A and Bayer، نويسنده , , M and Forchel، نويسنده , , A and Sorensen، نويسنده , , C.B، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
6
From page
379
To page
384
Abstract
We investigated low-temperature photoluminescence from p-type Al1−xGaxAs/GaAs heterostructures. Our measurements show that at low laser power the H-band emission disappears and is replaced by a line resulting from the recombination of donor-bound electrons with two-dimensional holes. The properties of both lines are explained based on the results of detailed band structure calculations. Measurements in magnetic fields enabled us to examine the binding energy of donor in parallel electric and magnetic fields.
Keywords
E. Luminescence , A. Heterojunctions , D. Optical properties , D. Electronic states (localized)
Journal title
Solid State Communications
Serial Year
2002
Journal title
Solid State Communications
Record number
1762230
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