Title of article
A substantial improvement in magnetoresistance by Cu doping at Mn sites of La2/3Ca1/3MnO3
Author/Authors
Yuan، نويسنده , , S.L. and Yang، نويسنده , , Y.P and Xia، نويسنده , , Z.C and Peng، نويسنده , , G and Zhang، نويسنده , , G.H. and Tang، نويسنده , , J and Liu، نويسنده , , J and Zhang، نويسنده , , L.J. and Zhong، نويسنده , , Q.H. and Liu، نويسنده , , S and Chen، نويسنده , , L and Feng، نويسنده , , W and Li، نويسنده , , Z.Y. and Liu، نويسنده , , L and Zhang، نويسنده , , G.Q. and Tu، نويسنده , , F and Xiong، نويسنده , , C.S، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
4
From page
55
To page
58
Abstract
It is reported here that the colossal magnetoresistance can be realized at low magnetic fields by doping at the Mn site of La2/3Ca1/3MnO3 with a small amount of Cu. Defining magnetoresistance by MR0≡Δρ/ρ(H=0), MR0 near the insulator–metal transition is found to increase from ∼3 to ∼90% with x from 0 to 4% for a low field ∼0.5 T. We also show that the intergrain magnetoresistance can be largely improved through this doping.
Keywords
manganites , Cu doping , D. Colossal magnetoresistance
Journal title
Solid State Communications
Serial Year
2002
Journal title
Solid State Communications
Record number
1762318
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