Title of article :
Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy
Author/Authors :
Park، نويسنده , , M.C and Huh، نويسنده , , K.S and Myoung، نويسنده , , J.M and Lee، نويسنده , , J.M and Chang، نويسنده , , J.Y. and Lee، نويسنده , , K.I and Han، نويسنده , , S.H. Tony Lee، نويسنده , , W.Y، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
We report on the crystal structures, magnetic and magnetotransport properties of epitaxial (Ga1−xMnx)N films with low Mn concentration (x=0.06–0.5%) grown by plasma-enhanced molecular beam epitaxy, exhibiting n-type conductivity and ferromagnetism with Curie temperature in the range 550–700 K. Transmission electron microscopy studies revealed that Mn ions substitute for Ga ions in the epitaxial structure, leading to the expansion of the lattice parameter a of the hexagonal (wurtzite) structure. The temperature dependence of the sheet resistance is found to show negative magnetoresistance in the temperature range 4–300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.
Keywords :
Mn)N , A. Diluted magnetic semiconductor , A. Wide bandgap ferromagnetic semiconductor , B. Plasma-enhanced molecular beam epitaxy , A. (Ga
Journal title :
Solid State Communications
Journal title :
Solid State Communications
