Title of article :
The structure and properties of Mn3O4 thin films grown by MOCVD
Author/Authors :
Gorbenko، نويسنده , , O.Yu. and Graboy، نويسنده , , I.E. and Amelichev، نويسنده , , V.A. and Bosak، نويسنده , , A.A. and Kaul، نويسنده , , A.R. and Güttler، نويسنده , , B. and Svetchnikov، نويسنده , , V.L. and Zandbergen، نويسنده , , H.W.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
6
From page :
15
To page :
20
Abstract :
The results of the simultaneous deposition of Mn3O4 films 100 nm thick at 750 °C and P(O2)=1 mbar by MOCVD on three different single crystal substrates (MgO, LaAlO3 and SrTiO3) are considered. Using X-ray diffraction, Raman spectrometry, high-resolution transmission electron microscopy and magnetic measurements we have demonstrated that the films grown on MgO differ greatly from the stable tetragonal bulk form of Mn3O4 (hausmannite) and are very similar to the high-temperature cubic form with the suppressed Jahn–Teller distortion in manganese–oxygen octahedra. The hausmannite films of the mixed orientations were grown on perovskite substrates. The experimental results are discussed in the framework of the epitaxial stabilization model.
Keywords :
D. Phase transitions , A. Thin films , B. Epitaxy , C. Scanning and transmission electron microscopy
Journal title :
Solid State Communications
Serial Year :
2002
Journal title :
Solid State Communications
Record number :
1762472
Link To Document :
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