Title of article :
On the high pressure electronic topological transitions in zinc
Author/Authors :
Godwal، نويسنده , , B.K. and Modak، نويسنده , , P. and Rao، نويسنده , , R.S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
5
From page :
401
To page :
405
Abstract :
We report room temperature electronic structure calculations on zinc at various compressions. Calculations show that the ln H scaling of the equation of state (EOS) in different forms shows changes of slope near 10 GPa indicating subtle electronic structure changes. The L-point electronic topological transition (ETT) is found to be very sensitive to the exchange-correlation terms. Even though elevated temperature is expected to reduce the signatures of an ETT, it also alters the proximity of the eigenvalues to the Fermi level, and this effect enhances the possibility of an ETT at the L-point in Zn. The weak c/a anomaly around 10 GPa persists in the 300 K calculations also.
Keywords :
D. Equation of states , D. Electronic topological transition , E. High pressure
Journal title :
Solid State Communications
Serial Year :
2003
Journal title :
Solid State Communications
Record number :
1762674
Link To Document :
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