• Title of article

    On the high pressure electronic topological transitions in zinc

  • Author/Authors

    Godwal، نويسنده , , B.K. and Modak، نويسنده , , P. and Rao، نويسنده , , R.S.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    5
  • From page
    401
  • To page
    405
  • Abstract
    We report room temperature electronic structure calculations on zinc at various compressions. Calculations show that the ln H scaling of the equation of state (EOS) in different forms shows changes of slope near 10 GPa indicating subtle electronic structure changes. The L-point electronic topological transition (ETT) is found to be very sensitive to the exchange-correlation terms. Even though elevated temperature is expected to reduce the signatures of an ETT, it also alters the proximity of the eigenvalues to the Fermi level, and this effect enhances the possibility of an ETT at the L-point in Zn. The weak c/a anomaly around 10 GPa persists in the 300 K calculations also.
  • Keywords
    D. Equation of states , D. Electronic topological transition , E. High pressure
  • Journal title
    Solid State Communications
  • Serial Year
    2003
  • Journal title
    Solid State Communications
  • Record number

    1762674