Binding energy of hydrogenic impurities in a quantum well under the tilted magnetic field

This paper treats theoretically the angle dependence of the ground state binding energy of a shallow donor impurity in semiconductor quantum-well systems on the tilted magnetic field. By making an appropriate coordinate transform we have calculated the ground state binding energy of a shallow donor impurity at the center of GaAs/Ga1−xAlxAs quantum well in the effective-mass approximations and variationally. We show that the binding energy depends strongly not only on quantum confinement, but also on the direction of the magnetic field. For example; for L0=100 Å, the change of the binding energy between θ=15 and 45° approximately is 2.5Ry (∼13 meV). We expect that this change will be useful in designing the quantum-well structure in which the impurity effects play important role.