Intraband photon absorption coefficient of hot 2D-electrons interacting with polar-optical phonon modes in n-GaAs-SQWs

The intraband photon absorption coefficient K of hot 2D electrons interacting with polar-optical (PO) half space-, interface-, confined- and bulk-phonon modes in AlxGa1−xAs/GaAs-Square-Quantum-Wells is calculated perturbation-theoretically and analyzed systematically as a function of the photon wave number ν̃, the quantum-well thickness Lz, the electron temperature Te and density ne taking into account the screening effect as well as the plasmon–phonon coupling. In the quantum limit the quoted modes are leading to K∝ν̃−xne−y, where x and y vary in the ranges 1.5≤x≤2.5 and 0.07≤y≤1.1 at degeneracy conditions. At low temperatures the plasmon–phonon coupling enhances the absorption coefficient near the resonant photon absorption maximum by about 20%.