Author/Authors :
Jeong، نويسنده , , Jin and Choi، نويسنده , , Seong-Pyung and Chang، نويسنده , , Cha Ik and Shin، نويسنده , , Dong Chan and Park، نويسنده , , Jin Sung and Lee، نويسنده , , B-T and Park، نويسنده , , Yeong-Jun and Song، نويسنده , , Ho-Jun، نويسنده ,
Abstract :
The photoluminescence properties of SnO2 thin films grown by thermal chemical vapor deposition were investigated with different substrate temperatures. X-ray diffraction showed that the crystallinity of the grown thin films increased with increasing substrate temperature. Two narrow peaks and two broad peaks were observed from the photoluminescence measurements at 6 K. The intensity and shape of the broad peaks changed with increasing substrate temperature. It is concluded that the origin of the broad peak at 2.4 eV was due to oxygen vacancies and that of peak at 3.1 eV was related to structural defects.
Keywords :
B. Chemical synthesis , A. Thin films , C. Impurity in semiconductors , D. Optical properties , E. Luminescence
