• Title of article

    Optical parameters in ZnO nanocrystalline textured films grow on p-InP (100) substrates

  • Author/Authors

    Kim، نويسنده , , T.W. and Kwack، نويسنده , , K.D. and Kim، نويسنده , , H.-K. and Yoon، نويسنده , , Y.S. and Bahang، نويسنده , , J.H. and Park، نويسنده , , H.L.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    4
  • From page
    635
  • To page
    638
  • Abstract
    Spectroscopic ellipsometry measurements on ZnO nanocrystalline textured films grown on p-InP (100) substrates by using radio-frequency magnetron sputtering at room temperature were carried out to investigate their optical parameters. Transmission electron microscopy measurements showed that ZnO thin films grown on p-InP (100) substrates were nanocrystalline. The dielectric function, the refractive indice, and the extinction coefficient of the ZnO thin films were determined as functions of the photon energy, and the energy gap of the ZnO nanocrystalline film was 3.38 eV. These results can help to improve the understanding of the ZnO nanocrystalline thin film grown on p-InP (100) substrates for potential use in optoelectronic devices based on InP substrates.
  • Keywords
    A. Semiconductors , B. Optical properties
  • Journal title
    Solid State Communications
  • Serial Year
    2003
  • Journal title
    Solid State Communications
  • Record number

    1762775