Title of article
Optical parameters in ZnO nanocrystalline textured films grow on p-InP (100) substrates
Author/Authors
Kim، نويسنده , , T.W. and Kwack، نويسنده , , K.D. and Kim، نويسنده , , H.-K. and Yoon، نويسنده , , Y.S. and Bahang، نويسنده , , J.H. and Park، نويسنده , , H.L.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
635
To page
638
Abstract
Spectroscopic ellipsometry measurements on ZnO nanocrystalline textured films grown on p-InP (100) substrates by using radio-frequency magnetron sputtering at room temperature were carried out to investigate their optical parameters. Transmission electron microscopy measurements showed that ZnO thin films grown on p-InP (100) substrates were nanocrystalline. The dielectric function, the refractive indice, and the extinction coefficient of the ZnO thin films were determined as functions of the photon energy, and the energy gap of the ZnO nanocrystalline film was 3.38 eV. These results can help to improve the understanding of the ZnO nanocrystalline thin film grown on p-InP (100) substrates for potential use in optoelectronic devices based on InP substrates.
Keywords
A. Semiconductors , B. Optical properties
Journal title
Solid State Communications
Serial Year
2003
Journal title
Solid State Communications
Record number
1762775
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