Title of article
Radiative recombination lifetime of excitons in self-organized InAs/GaAs quantum dots
Author/Authors
Melliti، نويسنده , , A. and Maaref، نويسنده , , M.A. and Hassen، نويسنده , , F. and Hjiri، نويسنده , , M. and Maaref، نويسنده , , H. and Tignon، نويسنده , , J. P. Sermage ، نويسنده , , B.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
5
From page
213
To page
217
Abstract
We report an investigation of the exciton dynamics in self-organized InAs/GaAs quantum dots (QDʹs) grown by molecular-beam epitaxy on (001)-oriented GaAs substrate. We have combined continuous wave and time resolved luminescence as a function of temperature to obtain quantitative information on the recombination processes in the dots. We have found that the excitonic radiative lifetime of two monolayers InAs QDʹs is almost independent of temperature.
Keywords
E. Photoluminescence , E. Temperature , A. InAs/GaAs , D. Decay time , A. Quantum dots , D. Radiative lifetime
Journal title
Solid State Communications
Serial Year
2003
Journal title
Solid State Communications
Record number
1762833
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