Title of article :
Radiative recombination lifetime of excitons in self-organized InAs/GaAs quantum dots
Author/Authors :
Melliti، نويسنده , , A. and Maaref، نويسنده , , M.A. and Hassen، نويسنده , , F. and Hjiri، نويسنده , , M. and Maaref، نويسنده , , H. and Tignon، نويسنده , , J. P. Sermage
، نويسنده , , B.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
We report an investigation of the exciton dynamics in self-organized InAs/GaAs quantum dots (QDʹs) grown by molecular-beam epitaxy on (001)-oriented GaAs substrate. We have combined continuous wave and time resolved luminescence as a function of temperature to obtain quantitative information on the recombination processes in the dots. We have found that the excitonic radiative lifetime of two monolayers InAs QDʹs is almost independent of temperature.
Keywords :
E. Photoluminescence , E. Temperature , A. InAs/GaAs , D. Decay time , A. Quantum dots , D. Radiative lifetime
Journal title :
Solid State Communications
Journal title :
Solid State Communications
