InMnN: a nitride-based diluted magnetic semiconductor

New nitride-based diluted magnetic semiconductor In1−xMnxN films were grown on Al2O3 substrate at low temperature (200 °C) by RF-plasma-assisted molecular beam epitaxy. Both X-ray diffraction and atomic force microscope indicate that Mn can be homogeneously incorporated into InN up to 10%. The bandgap of In1−xMnxN decreases with increasing Mn concentration. Magnetization measurements indicate that the In1−xMnxN films with low Mn content x=0.04 displayed a clear paramagnetic behavior down to 1.7 K, whereas a paramagnetic to spin–glass transition was observed for the samples with x=0.1 at about 3 K.