Author/Authors :
Wang، نويسنده , , J.X. and Liu، نويسنده , , D.F. and Yan، نويسنده , , X.Q. and Yuan، نويسنده , , H.J. and Ci، نويسنده , , L.J. and Zhou، نويسنده , , Z.P. and Gao، نويسنده , , Y. and Song، نويسنده , , L. and Liu، نويسنده , , L.F. and Zhou، نويسنده , , W.Y. and Wang، نويسنده , , G. and Xie، نويسنده , , S.S.، نويسنده ,
Abstract :
SnO2 nanowires have been prepared using the active carbon reaction with the fine SnO2 powder at low temperature (700 °C). These nanowires show rectangular cross-section, with their widths ranging from 10 to 50 nm. Branched nanowires with definite included angle are also observed in these products. The morphology and microstructure of the single crystalline SnO2 nanowires and the branched nanowires are characterized by means of scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), selective area electron diffraction (SAED) and Raman spectrum. In addition, the possible growth mechanism of the SnO2 nanowires and branched nanowires is also discussed.
