Title of article
Calculation of bound and resonant donor states of GaAs in a magnetic field
Author/Authors
Nilsson، نويسنده , , K. J. Blom، نويسنده , , A. and Shlyapin، نويسنده , , V.V.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
187
To page
191
Abstract
The effect of a magnetic field on the energy spectrum of a hydrogenic impurity is investigated using a basis expansion technique. Several excited impurity states, of which some are resonant, are found. Lifetimes are calculated and, by including an electric field, we are able to explain forbidden but experimentally observed optical transitions.
Keywords
A. III–V semiconductors , D. Resonant states , D. Lifetime , D. Landau levels , C. Impurities in semiconductors
Journal title
Solid State Communications
Serial Year
2004
Journal title
Solid State Communications
Record number
1763102
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